Chip Dimensions:
length x width: 16.5 mm x 16.5 mm
View (scan direction: horizontal)

Structure	Type VS W	Type VS B	Type VS D*	Type VS O
Groove "a" width x length, µm	top measures 500 x 6500	top measures 500 x 6500	500 x 6500	500 x 6500
Deepening "b" width x length, µm	top measures 6500 x 6500	top measures 6500 x 6500	6500 x 6500	6500 x 6500
Scale "d": 25 grooves, µm	top width | distance 125 | 125	top width | distance 125 | 125	width | distance 125 | 125	width | distance 125 | 125
γ, deg	54.7	54.7	ca. 90	-
Step in depth	Groove "a"	Groove "a"	1st groove of scale "d"	1st groove of scale "d"
Step in height	Wall between "a" and "b"	Wall between "a" and "b"	Wall between two grooves of scale "d"	Wall between two grooves of scale "d"

Specification (typical values) of the step in depth in the scan direction for types VS W

Nominal depth d, µm	1	2	5	10	20	50	100	200	600	900
Real values, µm	1.03 ± 0.1	2 ± 0.2	5.1 ± 0.2	10.2 ± 0.4	20.2 ± 0.6	50.0 ± 0.8	100.0 ± 1.0	204 ± 2.0	620 ± 6	935 ± 10
Width of the upper level at left, µm	500	500	500	500	500	500	500	500	500	500
Width of the upper level at right, µm	> 500	> 500	> 500	> 500	> 500	> 500	> 500	> 500	> 500	> 500
Ra(Top) at the upper level, nm	< 5	< 5	< 5	< 5	< 5	< 5	< 5	< 5	< 5	< 5
Nominal width of the level in the depth (etch ground), µm	1771	1769	1765	1758	1744	1701	1631	1489	924	499
Pt(EG) of the etch ground, nm	20	20	30	30	30	50	200	200	3500	1500
Pt(EG) inside the middle third of the etch ground, nm	12	15	15	15	15	20	600	260	700	200
Ra(EG) at the etch ground, nm	< 5	< 5	< 5	< 5	< 5	5	5	15	60	30
Certificated uncertainty, nm	± 25	± 25	± 25	± 25	± 25	± 50	± 50	± 150	± 250	± 150

Specification (typical values) of the step in the scan direction for types VS B and VS O

Step in depth: etch ground between the top level at left and the top level at right

Step in height: top level between the etch ground at left and the etch ground at right

Type	VS B	VS B	VS B	VS B	VS B	VS B	VS O	VS O
Nominal depth resp. hight, µm	200	400	500	525	600	1000*	0.230	0.450
Deviation of an individual standard from the nominal depth, µm	± 5	± 10	± 10	± 10	± 10		± 0.010	± 0.010
Width of the top level at left, µm	500	500	500	500	500		> 125	> 125
Width of the top level at right, µm	> 500	> 500	> 500	> 500	> 500		125	125
Width of the etch ground at left, µm	> 500	> 500	> 500	> 500	> 500		-	-
Width of the etch ground at right, µm	1482	1209	1082	1027	921		125	125
Ra(Top) at the upper level, nm	< 5	< 5	< 5	< 5	< 5		< 5	< 5
Pt(EG) of the etch ground, nm	80	60	60	80	80		10	10
Pt(EG) inside the middle third of the etch ground, nm	40	20	30	25	40		6	6
Ra(EG) at the etch ground, nm	< 5	< 5	< 5	< 5	< 5		< 5	< 5
Certificated uncertainty, nm	± 70	± 70	± 70	± 70	± 70		± 7	± 7

Legend:
d - etch depth
γ - angle of inclination of sidewalls
R_a(Top) - arithmetic average roughness of the polished surface (1000 µm scan length)
R_a(EG) - arithmetic average roughness of the etch ground (1000 µm scan length)
Pt(EG) - maximum peak to valley distance of the etch ground

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Order Codes

Nominal Depth	Wet Etch, Glass Substrate	Bonded Wafer, Glass Substrate	Wet Etch, Silicon Substrate	Bonded Wafer, Silicon Substrate
0.05
0.1
0.2
0.5
1	VS W 1 G		VS W 1 S
2	VS W 2 G		VS W 2 S
5	VS W 5 G		VS W 5 S
10	VS W 10 G		VS W 10 S
20	VS W 20 G		VS W 20 S
50	VS W 50 G		VS W 50 S
100	VS W 100 G		VS W 100 S
200	VS W 200 G	VS B 200 G	VS W 200 S	VS B 200 S
400		VS B 400 G		VS B 400 S
525		VS B 525 G		VS B 525 S
600	VS W 600 G	VS B 600 G	VS W 600 S	VS B 600 S
900	VS W 900 G		VS W 900 S
1000	VS B 1000 G*	VS B1000 G*		VS B 100 S*

Nominal Depth	Oxidized, Glass Substrate	Dry Etched, Glass Substrate	Oxidized, Silicon Substrate	Dry Etched, Silicon Substrate
0.05	VS O 0.05 G*		VS O 0.05 S*
0.1	VS O 0.1 G*		VS O 0.1 S*
0.2	VS O 0.2 G*		VS O 0.2 S*
0.5	VS O 0.5 G*	VS D 0.5 G*	VS O0.5 S*	VS D 0.5 S*
1		VS D 1 G*		VS D 1 S*
2		VS D 2 G*		VS D 2 S*
5		VS D 5 G*		VS D 5 S*
10		VS D 10 G*		VS D 10 S*
20		VS D 20 G*		VS D 20 S*
50		VS D 50 G*		VS D 50 S*
100		VS D 100 G*		VS D 100 S*
200
400
525
600
900
1000

Order:

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